Vertical gate-all-around tfet

ABSTRACT

A vertical tunneling FET (TFET) provides low-power, high-speed switching performance for transistors having critical dimensions below 7 nm. The vertical TFET uses a gate-all-around (GAA) device architecture having a cylindrical structure that extends above the surface of a doped well formed in a silicon substrate. The cylindrical structure includes a lower drain region, a channel, and an upper source region, which are grown epitaxially from the doped well. The channel is made of intrinsic silicon, while the source and drain regions are doped in-situ. An annular gate surrounds the channel, capacitively controlling current flow through the channel from all sides. The source is electrically accessible via a front side contact, while the drain is accessed via a backside contact that provides low contact resistance and also serves as a heat sink. Reliability of vertical TFET integrated circuits is enhanced by coupling the vertical TFETs to electrostatic discharge (ESD) diodes.

BACKGROUND Technical Field

The present disclosure generally relates to various geometries forgate-all-around transistor devices built on a silicon substrate and, inparticular, to transistors that are suitable for low-power applications.

Description of the Related Art

Conventional integrated circuits incorporate planar field effecttransistors (FETs) in which current flows through a semiconductingchannel between a source and a drain, in response to a voltage appliedto a control gate. The semiconductor industry strives to obey Moore'slaw, which holds that each successive generation of integrated circuitdevices shrinks to half its size and operates twice as fast. As devicedimensions have shrunk below 100 nm, however, conventional silicondevice geometries and materials have experienced difficulty maintainingswitching speeds without incurring failures such as, for example,leaking current from the device into the semiconductor substrate.Several new technologies have emerged that allowed chip designers tocontinue shrinking gate lengths to 45 nm, 22 nm, and then as low as 14nm. One particularly radical technology change entailed re-designing thestructure of the FET from a planar device to a three-dimensional devicein which the semiconducting channel was replaced by a fin that extendsout from the plane of the substrate. In such a device, commonly referredto as a FinFET, the control gate wraps around three sides of the fin soas to influence current flow from three surfaces instead of one. Theimproved control achieved with a 3-D design results in faster switchingperformance and reduced current leakage. Building taller devices hasalso permitted increasing the device density within the same footprintthat had previously been occupied by a planar FET. Examples of FinFETdevices are described in further detail in U.S. Pat. No. 8,759,874 andU.S. Patent Publication 2014/0175554, assigned to the same assignee asthe present patent application.

The FinFET concept was further extended by developing a gate-all-aroundFET, or GAA FET, in which the gate fully wraps around the channel formaximum control of the current flow therein. In the GAA FET, the channelcan take the form of a cylindrical nanowire that is isolated from thesubstrate, in contrast to the peninsular fin. In the GAA FET thecylindrical nanowire is surrounded by the gate oxide, and then by thegate. Existing GAA FETs are oriented horizontally, such that thenanowire extends in a direction that is substantially parallel to thesurface of the semiconductor substrate. GAA FETs are described in, forexample, U.S. Patent Publication No. 2013/0341596 to Chang et al., ofIBM, and in U.S. Patent Publication No. 2015/0372104 to Liu et al.,assigned to the same assignee as the present patent application.

As integrated circuits shrink with each technology generation, morepower is needed to drive a larger number of transistors housed in asmaller volume. To prevent chips from overheating, and to conservebattery power, each generation of transistors is designed to operate ata lower voltage and to dissipate less power. In a conventionalcomplementary metal-oxide-semiconductor (CMOS) field effect transistor,the source and drain are doped to have a same polarity, e.g., bothpositive, in a P-FET, or both negative, in an N-FET. When the gatevoltage applied to the transistor, V_(G), exceeds a threshold voltage,V_(T), the device turns on and current flows through the channel. Whenthe gate voltage applied to the transistor is below the thresholdvoltage, the drain current, I_(D), ideally is zero and the device isoff. However, in reality, in the sub-threshold regime, there exists asmall leakage current that is highly sensitive to the applied voltage.Over time, the leakage current drains charge from the power supply,e.g., a mobile phone battery or a computer battery, thus necessitatingmore frequent recharging. A change in gate voltage that is needed toreduce the sub-threshold leakage current by a factor of 10 is called thesub-threshold swing. It is desirable for the sub-threshold swing to beas small as possible. It is understood by those skilled in the art thatMOSFETs have reached their lower limit of sub-threshold swing at 60mV/decade. Thus, a different type of device is needed to furtherdecrease the sub-threshold swing.

Tunneling field effect transistors (TFETs) are considered promisingalternatives to conventional CMOS devices for use in future integratedcircuits having low-voltage, low-power applications. Unlike a MOSFET,the source and drain of a TFET are doped to have opposite polarity.During operation of the TFET, charge carriers tunnel through a potentialbarrier rather than being energized to surmount the potential barrier,as occurs in a MOSFET. Because switching via tunneling requires lessenergy, TFETs are particularly useful in low-power applications such asmobile devices, for which battery lifetime is of utmost importance.Another reason TFETs provide enhanced switching performance forlow-voltage operation is that TFETs have substantially smaller values ofsub-threshold swing than MOSFETs.

BRIEF SUMMARY

A vertical TFET provides low-power, high-speed switching performance fortransistors having critical dimensions below 7 nm. In one embodiment,the vertical TFET is implemented in silicon, using a gate-all-around(GAA) device architecture. The vertical GAA TFET is a linear, or 1-D,device in the form of a nanowire oriented transverse to planar front andback surfaces of the silicon substrate. The nanowire includes a lowerdrain region, a channel, and an upper source region, which are grownepitaxially from the doped well. The channel region is made of intrinsicsilicon, while the source and drain regions are doped in-situ. Anannular gate surrounds the channel region, capacitively controllingcurrent flow through the channel from all sides. The source iselectrically accessible via a front side contact, while the drain isaccessed via a backside contact that provides low contact resistance andalso serves as a heat sink.

Reliability of vertical TFET integrated circuits is enhanced by couplingthe TFETs to electrostatic discharge (ESD) diodes. Both vertical andhorizontal ESD diode configurations are described herein. ESD diodesprovide protection for TFETs and other GAA transistors against highcurrents and voltages, especially in analog and I/O applications.

Fabrication of the vertical TFETs and ESD diodes as described herein iscompatible with conventional CMOS manufacturing processes. Low-poweroperation allows the vertical TFET to provide a high current density, or“current per footprint” on a chip, compared with conventional planartransistors. The high current density allowed by these devices makesthem good candidates for memory applications, e.g., for SRAM arrays.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

In the drawings, identical reference numbers identify similar elementsor acts. The sizes and relative positions of elements in the drawingsare not necessarily drawn to scale.

FIG. 1 is a flow diagram showing steps in a method of fabricating a pairof n-type and p-type vertical GAA TFETs as illustrated in FIGS. 2-12,according to one embodiment described herein.

FIGS. 2-12 are cross-sectional views of the vertical GAA TFETs atsuccessive steps during fabrication using the method shown in FIG. 1.

FIGS. 13-14 are cross-sectional views of alternative embodiments ofcompleted n-type and p-type vertical GAA TFETs shown in FIG. 12, whereineach embodiment has a different contact configuration, as describedherein.

FIG. 15 is a flow diagram showing steps in a method of fabricating apair of vertical diodes as illustrated in FIGS. 16-18, according to afirst embodiment as described herein.

FIGS. 16-18 are cross-sectional views of the pair of vertical diodes atsuccessive steps during fabrication using the method shown in FIG. 15.

FIG. 19 is a cross-sectional view of a completed vertical diode,according to a second embodiment as described herein.

FIG. 20 is a flow diagram showing steps in an alternative method offabricating vertical diodes and a horizontal diode, according to oneembodiment described herein.

FIG. 21 is a cross-sectional view of a completed pair of vertical diodesand a horizontal diode fabricated using the method shown in FIG. 20.

DETAILED DESCRIPTION

In the following description, certain specific details are set forth inorder to provide a thorough understanding of various aspects of thedisclosed subject matter. However, the disclosed subject matter may bepracticed without these specific details. In some instances, well-knownstructures and methods of semiconductor processing comprisingembodiments of the subject matter disclosed herein have not beendescribed in detail to avoid obscuring the descriptions of other aspectsof the present disclosure.

Unless the context requires otherwise, throughout the specification andclaims that follow, the word “comprise” and variations thereof, such as“comprises” and “comprising” are to be construed in an open, inclusivesense, that is, as “including, but not limited to.”

Reference throughout the specification to “one embodiment” or “anembodiment” means that a particular feature, structure, orcharacteristic described in connection with the embodiment is includedin at least one embodiment. Thus, the appearance of the phrases “in oneembodiment” or “in an embodiment” in various places throughout thespecification are not necessarily all referring to the same aspect.Furthermore, the particular features, structures, or characteristics maybe combined in any suitable manner in one or more aspects of the presentdisclosure.

Reference throughout the specification to integrated circuits isgenerally intended to include integrated circuit components built onsemiconducting substrates, whether or not the components are coupledtogether into a circuit or able to be interconnected. Throughout thespecification, the term “layer” is used in its broadest sense to includea thin film, a cap, or the like and one layer may be composed ofmultiple sub-layers. Throughout the specification, the terms “N-well”and “N-well region” are used synonymously in reference tonegatively-doped regions of a semiconductor. Likewise, the terms“P-well” and “P-well region” are also used synonymously in reference topositively-doped regions of a semiconductor.

Reference throughout the specification to conventional thin filmdeposition techniques for depositing silicon nitride, silicon dioxide,metals, or similar materials include such processes as chemical vapordeposition (CVD), low-pressure chemical vapor deposition (LPCVD), metalorganic chemical vapor deposition (MOCVD), plasma-enhanced chemicalvapor deposition (PECVD), plasma vapor deposition (PVD), atomic layerdeposition (ALD), molecular beam epitaxy (MBE), electroplating,electro-less plating, and the like. Specific embodiments are describedherein with reference to examples of such processes. However, thepresent disclosure and the reference to certain deposition techniquesshould not be limited to those described. For example, in somecircumstances, a description that references CVD may alternatively bedone using PVD, or a description that specifies electroplating mayalternatively be accomplished using electro-less plating. Furthermore,reference to conventional techniques of thin film formation may includegrowing a film in-situ. For example, in some embodiments, controlledgrowth of an oxide to a desired thickness can be achieved by exposing asilicon surface to oxygen gas or to moisture in a heated chamber.

Reference throughout the specification to conventional photolithographytechniques, known in the art of semiconductor fabrication for patterningvarious thin films, includes a spin-expose-develop process sequencetypically followed by an etch process. Alternatively or additionally,photoresist can also be used to pattern a hard mask (e.g., a siliconnitride hard mask), which, in turn, can be used to pattern an underlyingfilm.

Reference throughout the specification to conventional etchingtechniques known in the art of semiconductor fabrication for selectiveremoval of polysilicon, silicon nitride, silicon dioxide, metals,photoresist, polyimide, or similar materials includes such processes aswet chemical etching, reactive ion (plasma) etching (RIE), washing, wetcleaning, pre-cleaning, spray cleaning, chemical-mechanicalplanarization (CMP) and the like. Specific embodiments are describedherein with reference to examples of such processes. However, thepresent disclosure and the reference to certain deposition techniquesshould not be limited to those described. In some instances, two suchtechniques may be interchangeable. For example, stripping photoresistmay entail immersing a sample in a wet chemical bath or, alternatively,spraying wet chemicals directly onto the sample.

Specific embodiments are described herein with reference to verticalgate-all-around TFET devices that have been produced; however, thepresent disclosure and the reference to certain materials, dimensions,and the details and ordering of processing steps are exemplary andshould not be limited to those shown.

Turning now to the figures, FIG. 1 shows steps in a method 100 offabricating a pair of vertical GAA TFETs 182 n,p, according to oneembodiment. The completed GAA TFET devices produced by the method 100are shown in FIG. 12. Alternative embodiments of the GAA TFET, formed bymodifying the method 100, are shown in FIGS. 13-14. Each vertical GAATFET is in the form of an epitaxially grown pillar having a doped lowerdrain region, a central channel region made of intrinsic silicon, and anupper source region doped to have a polarity opposite that of the lowerdrain region. The central channel region extends between the source anddrain regions. A gate structure surrounds the channel region so as toinfluence current flow between the source and drain regions in responseto an applied voltage. Steps in the method 100 are further illustratedby FIGS. 4-12, and described below.

At 102, an isolation region 132 is formed in a silicon substrate 130 toseparate p-type and n-type devices that will subsequently be formed. Theisolation region 132 incudes a liner 134 made of, for example, siliconnitride, and a silicon dioxide core 136, as shown in FIG. 2.

At 104, with reference to FIG. 3, a silicon substrate 130 having a <111>crystal orientation is doped to form an N-well 140 and a P-well 142 byion implantation using a hard mask 138, as is well known in the art. Theexemplary hard mask 138 is made of silicon dioxide (SiO₂) having athickness in the range of about 10 nm-50 nm. The hard mask 138 is grownor deposited over the surface of the silicon substrate 130, and ispatterned with a first opening 139 to define the P-well 142, forexample. Positive dopants such as boron ions are implanted into thesilicon substrate 130 through the first opening 139 and then annealed todrive in the dopants to a selected depth 144. In one embodiment, theboron concentration is desirably within the range of about 1.0 E16cm⁻³-5.0 E20 cm⁻³, targeted at 5.0 E19 cm⁻³. Then the hard mask 138 isstripped, re-formed, and patterned with a second opening 146 for theN-well 140. Negative dopants such as phosphorous ions or arsenic ionsare then implanted into the silicon substrate 130 through the secondopening 146, followed by annealing to drive in the negative dopants tothe selected depth 144. In one embodiment, the n-dopant concentration isdesirably within the range of about 1.0 E16 cm⁻³-3.0 E20 cm⁻³, targetedat 2.0 E19 cm⁻³. The first and second openings 139 and 146,respectively, can be the same size or different sizes, within a widerange of about 2 nm-200 nm.

At 106, epitaxial drain regions 150 n and 150 p are formed by epitaxialgrowth from the N-well and P-well regions 140 and 142 as shown in FIG.4, extending in a transverse orientation to the silicon substrate 130.The hard mask 138 is stripped, re-formed, and re-patterned with asmaller opening 148 n, for example. The drain region 150 n is then grownepitaxially from a top surface of the N-well 140. The hard mask 138 isagain stripped, re-formed, and re-patterned with a small opening 148 p.The drain region 150 p is then grown epitaxially from a top surface ofthe P-well 142. The drain regions 150 n and 150 p are grown to a heightanywhere within the wide range of about 5 nm-500 nm, with dopingoccurring in-situ during the epitaxial growth. The order in which the n-and p-type structures are patterned and grown is exemplary as describedabove, and can be reversed.

At 108, nanowires 151 n and 151 p containing intrinsic silicon channels152 and source regions 154 n and 154 p, respectively, are grownepitaxially from the drain regions 150 n and 150 p to complete formationof the pillars. First, cylindrical channels 152 made of intrinsicsilicon are grown to a height within the range of 2 nm-100 nm. Then, asource region 154 n made of indium arsenide (InAs), an n-type material,is selectively grown from the intrinsic silicon channel 152 thatoverlies the P-well 142 while a source region 154 p made of a boron-SiGecompound (BSi_(x)Ge_((1-x))), a p-type material, is selectively grownfrom the intrinsic silicon channel 152 that overlies the N-well 140, asshown in FIG. 4. The source regions 154 n and 154 p are each grown to athickness within the range of about 5 nm-500 nm. The epitaxial nanowires151 n and 151 p, as grown, have widths 148 p and 148 n, respectively.Next, the epitaxial nanowires 151 n and 151 p are trimmed to a targetcritical dimension (CD) 156, as needed, as shown in FIG. 5 using aplasma etching process. The CD 156 can be defined using a siliconnitride hard mask, for example. In one embodiment, epitaxial growth ofthe regions 150 n, 150 p, 152, 154 p, and 154 n may occur insidepatterned pillar-shaped holes formed in an insulating material, toprovide support for the vertical nanowires 151 n and 151 p. Theinsulating material can include one or more layers, and thepillar-shaped holes may further include liners. The pillar-shaped holesmay be used to define CD boundaries for the vertical nanowires 151 n and151 p.

At 110, the epitaxial nanowires 151 n and 151 p are encapsulated byspin-coating a thick layer of benzocyclobutene (BCB) 158 to cover theepitaxial nanowires, and then performing a chemical-mechanicalplanarization (CMP) operation that stops on the InAs andBSi_(x)Ge_((1-x)) source regions 154 n and 154 p, respectively.

At 112, the BCB encapsulant 158 is etched back to reveal the epitaxialnanowires 151 n and 151 p and top portions of the drain regions 150 nand 150 p, so that multi-layer gate structures 159 can be formed incontact with the exposed nanowires, as shown in FIG. 6, according to oneembodiment. The multi-layer gate structures 159 include a dielectricsheath wrapped around the channel and a metal gate wrapped around thedielectric sheath. The etch-back process can be, for example, a plasmaetch process that uses an O₂—SF₆ chemistry. Once the epitaxial nanowiresare exposed, a gate oxide 160 is conformally deposited. The gate oxide160 is desirably a high dielectric constant, or high-k, material ofthickness 1 nm-10 nm, such as HfO₂ or Al₂O₃, for example. Next, a workfunction material 162 of thickness 1 nm-20 nm is conformally deposited,followed by a gate metal 164 of thickness 10 nm-200 nm. The gate metal164 and the work function material 162 can be, for example, copper (Cu),aluminum (Al), tungsten (W), platinum (Pt), gold (Au), titanium nitride(TiN), tantalum nitride (TaN), titanium carbon (TiC), titanium-tungsten(TiW_(x)), or combinations thereof. Regions of the gate stack locatedbetween adjacent nanowires are then etched away as shown in FIG. 7,while regions of the gate stack outside the epitaxial nanowires remainto form gate contact landing pads 168.

At 114, the gate structures 159 are encapsulated. In one embodiment,encapsulation is accomplished by spin coating a second BCB layer 166,followed by a CMP process that is targeted to stop when a selected BCBthickness has been reached, above the metal gate structures 159.Alternatively, the planarization process can stop on the metal gatestructures 159.

At 116, the second BCB layer 166 is etched back to reveal portions ofthe metal gate structures 159 covering the source regions 154 n, 154 pto a level in the range of about 1 nm-300 nm above the intrinsic siliconchannel 152 to expose the gate metal 164. Then, the gate metal 164 andthe work function material 162 are etched away to reveal the gate oxide160 covering the source regions, thus leaving behind completed gates 170surrounding the intrinsic silicon channel regions.

At 118, epitaxial nanowires 151 p,n are encapsulated. In one embodiment,encapsulation is accomplished by spin coating a third BCB layer 172,followed by a CMP process that is targeted to stop when a selected BCBthickness has been reached, above the gate structures 159.

At 120, the third BCB layer 172 and the gate oxide 160 are etched backto a height 173 above a top surface of the gate metal 164, to reveal thetop 3 nm-300 nm of the InAs and BSi_(x)Ge_((1-x)) source regions 154n,p, as shown in FIGS. 9-12.

At 122, source regions 154 n,p are encapsulated. In one embodiment,encapsulation is accomplished by spin coating a fourth BCB layer 174,followed by a CMP process that is targeted to stop when a selected BCBthickness has been reached, above the gate structures 159.Alternatively, an oxide deposited using a high density plasma (HDP)process can be used in place of the fourth BCB layer 174.

At 124, contacts are made to the source regions. In one embodiment, adual damascene process is used to form front side source contacts 182 tothe epitaxial nanowire and a metal interconnect layer, while backsidecontacts 184 are made to the epitaxial drain regions 150 n,p via theimplant-doped well regions. First, dual damascene trenches 176 areetched in the fourth BCB layer 174, as well as contact holes surroundingthe source regions 154 n,p, as shown in FIG. 10. Then the source regions154 n,p can be reacted with metal to form a silicide e.g., TiSi, NiSiPt,or a dual silicide such as Pt, Ir for the p-type source 154 p, or Er, Ybfor the n-type source 154 n prior to filling the trenches and contactholes using established methods familiar to those skilled in the art ofdamascene processing. The metal fill desirably includes a liner made of,for example, TiN or TiC. The metal is then planarized to stop on thefourth BCB layer, as shown in FIG. 11. Finally, metal contacts ofthickness 5 nm-50 μm are made to the backside of the wafer to contactthe N-well 140 and the P-well 142, as shown in FIG. 12.

FIG. 13 shows a second embodiment of the vertical GAA TFET in whichadditional spacers are wrapped around the pillars between the gatestructures 170 and the source and drain regions. A first spacer 185 isformed between the gate structures 170 and the source regions 154 n,p,and a second spacer 185 is formed between the gate structures 170 andthe drain regions 140, 142. The spacers 185, 186 can be made of SiN orSiC, for example.

FIG. 14 shows a third embodiment of the vertical GAA TFET that featuresetched source contacts 190 in place of dual damascene contacts 182. Thesource contacts 190 differ from the dual damascene contacts 182 in thatthe source contacts 190 are formed by a subtractive etching process asopposed to forming and filling a trench, which is an additive process.Although either method can be used to form contacts to the sourceterminals of the GAA TFET, the front side source contacts 182 formed bythe dual damascene process may offer lower contact resistance and a moreflexible wire connection.

FIG. 15 shows steps in a method 200 of fabricating a vertical diode,according to one embodiment. The vertical diode can provideelectrostatic discharge (ESD) protection for the vertical GAA TFETdescribed above, to improve reliability. One advantage of the verticaldiode is its small footprint, which is particularly useful in supportingGAA transistors used to form digital SRAM and DRAM arrays. The method200 is further illustrated by FIGS. 16-19, and described below. The ESDdiode fabrication process can be performed at the same time as formationof the vertical GAA TFET and therefore the same reference numerals areused in the following description of the ESD diode formation, whereverpossible.

At 202, the silicon substrate 130 is implanted with dopants throughopenings in an implant hard mask 138 on a top side or surface 129 of thesubstrate 130. In one embodiment, the implant hard mask 138 is a 10nm-50 nm thick layer of SiO₂. An opening in the implant hard mask 138,in the range of about 2 nm-200 nm can be patterned using an RIE process.Positive ions, such as boron, can then be implanted in the substrate toform a p-doped region, or P-well 142, shown in FIG. 16, having a dopantconcentration of 1.0 E16 cm⁻³-1.0 E 20 cm⁻³. The P-well 142 is formedbetween a first portion 130-1 of the substrate 130 and a second portion130-2 of the substrate 130.

At 204, an n-doped vertical nanowire 154 having a top end 157 and abottom end 159, shown in FIG. 16, is formed by epitaxial growth from atop side or surface 141 of the p-doped region 142. In one embodiment,the vertical nanowire 154 is made of indium arsenide (InAs) having adiameter anywhere in the range of about 2 nm-200 nm and a heightanywhere in the range of about 8 nm-800 nm. Growth of the verticalnanowire 154 can be performed in a metal organic chemical vapordeposition (MOCVD) chamber using a trimethyl-indium (TMIn) source and atertiarybutyl-arsine molar flow of 0.7 μMol/min-12.6 μMol/min, at areactor pressure of 60 Torr, and a temperature between 400 C and 600 C.Negative doping of the vertical nanowire 154 can be achieved in-situ byinjecting disilane gas (Si₂H₆) during the epitaxial growth process atSi₂H₆/TMIn ratios of 10⁻⁶-10⁻². The junction of the bottom end 159 ofthe n-doped vertical nanowire 154 and the top side or surface 141 of thep-doped region 142 form a p-n diode 182 n.

At 206, the vertical nanowire 154 is encapsulated. In one embodiment, anencapsulant 174 is a layer of benzocyclobutene (BCB) that is spin-coatedto cover the p-n diode 182 n, and a CMP process is then used toplanarize the encapsulant 174 to a target thickness above the verticalnanowire 154.

At 208, a front side contact is formed to the vertical nanowire 154using a dual damascene process similar to that shown in FIGS. 10-11 anddescribed above, in which a contact via and a metal line trench having aT-shaped profile are etched in the encapsulant 174, and then the contactvia and the metal line trench are filled with metal. The metal fillincludes a liner 178 such as TiN, Ti/TiN, Ta, or TaN that surrounds atop portion 155 of the vertical nanowire 154, and a bulk metal 180 suchas W, Al, Cu, or Au that has a bottom portion or region 181 and a topportion or region 183. A silicidation process may be performed is formedat the contact surfaces of the vertical nanowire 154 to further reducecontact resistance as described above. The bulk metal is then planarizedto stop on the BCB layer.

At 210, a backside contact 184 is made on a bottom side or surface 131of the substrate 130 to a bottom side or surface 143 of the P-well 142,similar to those shown in FIGS. 12-14 and described above.

FIG. 18 shows a pair of vertical diodes, including the p-n diode 182 ndescribed above, and a reciprocal p-n diode 182 p. Whereas the p-n diode182 n includes a P-well and an n-doped vertical nanowire, the p-n diode182 p includes an N-well and a p-doped vertical nanowire. The two diodesare separated by an isolation region 132 that can be formed in the usualway, prior to doping the silicon substrate 130. The diodes 182 p and 182n have separate backside contacts 184 p and 184 n. Optional spacers 186may be formed below the contact vias, prior to the encapsulation step206. The spacers 186 can be made of SiC or SiCNH, for example.

FIG. 19 shows an alternative contact 190 to the vertical p-n diode 182n. The alternative contact 190 is formed by recessing the encapsulant174 down to a level below the top of the vertical nanowire 154, and thenperforming metallization using a subtractive process instead of a dualdamascene process. The subtractive process entails conformallydepositing a layer of metal and patterning and etching the metal,producing an inverted V-shaped profile. The alternative contact 190 isbetter suited to metal materials such as AlCu as opposed to Cu, which isdifficult to etch. Following formation of the alternative contact 190, atop ILD layer 192 is deposited and planarized to stop on the invertedV-shaped contact 190.

FIG. 20 shows steps in a method 230 of fabricating an integratedhorizontal p-n junction diode 222, according to one embodiment shown inFIG. 21.

At 232, the silicon substrate 130 is implanted with an N-well 140 asdescribed above in step 104.

At 234, the silicon substrate 130 is implanted with a P-well 142adjacent to the N-well 140 as described above in step 104, except thatthe P-well 142 partially overlaps the N-well 140 at 224. The overlap canbe accomplished via mask alignment or by using a tilted implantationprocess. The horizontal p-n junction diode 222 thus formed is useful inprotecting GAA transistors used in analog and I/O circuits that sustainhigh currents and voltages.

At 236, an insulating layer is formed, for example, the BCB encapsulant158, using a process similar to the one described above in step 110.

At 238, front side damascene contacts are made to the N-well 140 and theP-well 142, using a process similar to the one described above in step124, wherein the contacts have T-shaped profiles.

At 240, the backside contact 184 is formed to the silicon substrate 130.

It will be appreciated that, although specific embodiments of thepresent disclosure are described herein for purposes of illustration,various modifications may be made without departing from the spirit andscope of the present disclosure. Accordingly, the present disclosure isnot limited except as by the appended claims.

These and other changes can be made to the embodiments in light of theabove-detailed description. In general, in the following claims, theterms used should not be construed to limit the claims to the specificembodiments disclosed in the specification and the claims, but should beconstrued to include all possible embodiments along with the full scopeof equivalents to which such claims are entitled. Accordingly, theclaims are not limited by the disclosure.

The various embodiments described above can be combined to providefurther embodiments. All of the U.S. patents, U.S. patent applicationpublications, U.S. patent applications, foreign patents, foreign patentapplications and non-patent publications referred to in thisspecification and/or listed in the Application Data Sheet areincorporated herein by reference, in their entirety. Aspects of theembodiments can be modified, if necessary to employ concepts of thevarious patents, applications and publications to provide yet furtherembodiments.

1. (canceled)
 2. A device, comprising: a substrate having a firstsurface and a second surface opposite the first surface; and a diodeincluding: a first doped well in the substrate; a second doped well inthe substrate, the second doped well partially overlapping the firstdoped well in an overlapping region; a first contact on the firstsurface of the substrate at the first doped well, the first contacthaving a first portion extending away from the first surface of thesubstrate in a first direction; and a second contact on the firstsurface of the substrate at the second doped well, the second contacthaving a first portion extending away from the first surface of thesubstrate in the first direction.
 3. The device of claim 2, wherein thefirst contact includes a second portion extending in a second directiontransverse to the first direction.
 4. The device of claim 3, wherein thesecond portion of the first contact has a width that is less than awidth of the first doped well.
 5. The device of claim 3, wherein thesecond contact includes a second portion extending in the seconddirection.
 6. The device of claim 5, wherein the second portion of thesecond contact has a width that is less than a width of the second dopedwell.
 7. The device of claim 5, wherein the second portion of the firstcontact is spaced apart from the second portion of the second contact,and the overlapping region is aligned between the second portion of thefirst contact and the second portion of the second contact.
 8. Thedevice of claim 2, wherein the diode further includes a third contact onthe second surface of the substrate.
 9. The device of claim 2, furtherincluding an insulating layer on the first contact and the secondcontact.
 10. The device of claim 9, wherein the insulating layer is onthe first surface of the substrate at the first doped well.
 11. Thedevice of claim 10, wherein the insulating layer is on the first surfaceof the substrate at the second doped well.
 12. A device, comprising: asubstrate having a first surface and a second surface opposite the firstsurface in a direction; a first doped well extending from the firstsurface of the substrate toward the second surface of the substrate; asecond doped well extending from the first surface of the substratetoward the second surface of the substrate, a portion of the seconddoped well overlapping a portion of the first doped well; a firstdamascene contact having a first portion at the first doped well thatextends away from the first surface of the substrate in the direction;and a second damascene contact having a first portion at the seconddoped well that extends away from the first surface of the substrate inthe direction.
 13. The device of claim 12, further including aninsulating layer on the first damascene contact and the second damascenecontact.
 14. The device of claim 13, wherein the insulating layer is onthe first surface of the substrate at the first doped well and thesecond doped well.
 15. The device of claim 12, wherein the firstdamascene contact and the second damascene contact are T-shaped.
 16. Thedevice of claim 12, further comprising a third contact on the secondsurface of the substrate.
 17. A method, comprising: forming a firstdoped well in a substrate having a first surface and a second surfaceopposite the first surface; forming a second doped well in thesubstrate, the second doped well partially overlapping the first dopedwell; forming a first contact on the first surface of the substrate atthe first doped well, the first contact having a first portion extendingaway from the first surface of the substrate in a first direction; andforming a second contact on the first surface of the substrate at thesecond doped well, the second contact having a first portion extendingaway from the first surface of the substrate in the first direction. 18.The method of claim 17, further comprising forming a third contact onthe second surface of the substrate.
 19. The method of claim 17, furtherincluding forming an insulating layer on the first surface of thesubstrate.
 20. The method of claim 19, wherein the forming the firstcontact includes: forming a first recess and exposing a first portion ofthe first surface of the substrate at the first well by removing a firstportion of the insulating layer; and forming the first contact in thefirst recess.
 21. The method of claim 20, wherein forming the secondcontact includes: forming a second recess and exposing a second portionof the first surface of the substrate at the second well by removing asecond portion of the insulating layer; and forming the second contactin the second recess.